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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC182/D NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER BC182,A,B BC183 BC184 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC 182 50 60 BC 183 30 45 6.0 100 350 2.8 1.0 8.0 - 55 to +150 BC 184 30 45 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C 1 2 3 CASE 29-04, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO BC182 BC183 BC184 V(BR)CBO BC182 BC183 BC184 V(BR)EBO ICBO BC182 BC183 BC184 IEBO -- -- -- -- 0.2 0.2 0.2 -- 15 15 15 15 nA 60 45 45 6.0 -- -- -- -- -- -- -- -- V nA 50 30 30 -- -- -- -- -- -- V V Collector - Base Breakdown Voltage (IC = 10 mA, IE = 0) Emitter - Base Breakdown Voltage (IE = 100 mA, IC = 0) Collector Cutoff Current (VCB = 50 V, VBE = 0) (VCB = 30 V, VBE = 0) Emitter-Base Leakage Current (VEB = 4.0 V, IC = 0) Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996 1 BC182,A,B BC183 BC184 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 10 A, VCE = 5.0 V) hFE BC182 BC183 BC184 BC182 BC183 BC184 BC182 BC183 BC184 VCE(sat) -- -- VBE(sat) VBE(on) -- 0.55 -- 0.5 0.62 0.83 -- 0.7 -- -- 0.07 0.2 -- 0.25 0.6 1.2 V V 40 40 100 120 120 250 80 80 130 -- -- -- -- -- -- -- -- -- -- -- -- 500 800 800 -- -- -- V -- (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) Collector - Emitter On Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA)(1) Base - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)(1) Base-Emitter On Voltage (IC = 100 A, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V)(1) DYNAMIC CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) fT BC182 BC183 BC184 BC182 BC183 BC184 Cob Cib hfe BC182 BC183 BC184 BC182A BC182B NF 125 125 240 125 240 -- -- -- -- -- 500 900 900 260 500 dB -- -- -- 150 150 150 -- -- 100 120 140 200 240 280 -- 8.0 -- -- -- -- -- -- 5.0 -- pF pF -- MHz (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) Common Base Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Common Base Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k, f = 1.0 kHz) (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k, f = 1.0 kHz, f = 200 Hz) BC184 BC182 BC183 BC184 -- -- -- -- 2.0 2.0 2.0 2.0 4.0 10 10 4.0 1. Pulse Test: Tp 300 s, Duty Cycle 2.0%. 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data BC182,A,B BC183 BC184 2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.2 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 TA = 25C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V Figure 1. Normalized DC Current Gain f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) Figure 2. "Saturation" and "On" Voltages 400 300 200 10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25C 100 80 60 40 30 20 0.5 0.7 1.0 VCE = 10 V TA = 25C 3.0 Cob 2.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 Figure 3. Current-Gain -- Bandwidth Product Figure 4. Capacitances r b, BASE SPREADING RESISTANCE (OHMS) 170 160 150 VCE = 10 V f = 1.0 kHz TA = 25C 140 130 120 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) 5.0 10 Figure 5. Base Spreading Resistance Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 BC182,A,B BC183 BC184 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X-X DIM A B C D F G H J K L N P R V CASE 029-04 (TO-226AA) ISSUE AD STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data *BC182/D* BC182/D |
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